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12 October 2009 Simulation and analysis of GaN-based light-emitting diodes with diamond shaped
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Abstract
Improving light extraction efficiency (LEE) is important to enhance efficiency of light-emitting diodes (LEDs) and the issue has been studied comprehensively. A GaN-based LED chip with diamond shaped is presented in this letter and LEE was analyzed. The LEEs of the conventional chip and flip chip with different angle of slant from 0° to 20° were obtained through Monte-Carlo ray tracing method, which is a useful and efficient way in studying the LEE of LED. The results show that the LEE of the chip with obliquity enhanced by 20.2% compared with conventional rectangle chip with mirror bottom surface, however, there is no improve of the LEEs of flip chip and conventional chip with diffuse surface.
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Bin Cao, Pei Wang, Zhiyin Gan, and Sheng Liu "Simulation and analysis of GaN-based light-emitting diodes with diamond shaped", Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 75181D (12 October 2009); https://doi.org/10.1117/12.843471
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