12 October 2009 Theoretical study on optimization of high efficiency GaInP/GaInAs/Ge tandem solar cells
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Abstract
This paper investigates which dopping concentration or layer thickness should be used to design practical GaInP/GaInAs/Ge triple-junction cells in order to optimize their performance. A rigorous model includes optical and electrical modules is developed to simulate the external quantumn efficiency, photocurrent and photovoltage of the GaInP/GaInAs/Ge tandem solar cells. It is found that cell efficiency strongly dependend on the top cell thickness and doping concentration at base and emitter layers. Proper structures of the tandem cell operating under AM0 ("air mass zero") illumination are suggested to obtain high efficiency.
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Gui Jiang Lin, Gui Jiang Lin, Sheng Rong Huang, Sheng Rong Huang, Jyh Chiarng Wu, Jyh Chiarng Wu, Mei Chun Huang, Mei Chun Huang, } "Theoretical study on optimization of high efficiency GaInP/GaInAs/Ge tandem solar cells", Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 75181E (12 October 2009); doi: 10.1117/12.837568; https://doi.org/10.1117/12.837568
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