Paper
14 December 2009 Decades of rivalry and complementary of photon and electron beams
Author Affiliations +
Proceedings Volume 7520, Lithography Asia 2009; 752004 (2009) https://doi.org/10.1117/12.845745
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
Abstract
Not long after the photon beam was used to delineate circuit patterns in resist, e-beam was called for duty due to the concern of photons running out of resolution. The e-beam counterpart of proximity printing, projection printing, and direct writing quickly took shape as early as 1975. The race was on. Optical projection printing, taking advantage of a high degree of parallelism, excelled in throughput and economy for wafer patterning. However, electrons can be quickly deflected to directly write patterns. It took over mask writing. Rivalry turned into complementary for decades. Recently e-beam has a new opportunity to beat photon beam at its own game of parallelism and eliminate the problems associated with masks altogether. This presentation compares optical and e-beam imaging technically, economically, and historically, pointing to the rewards and challenges for each technology to succeed.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Burn J. Lin "Decades of rivalry and complementary of photon and electron beams", Proc. SPIE 7520, Lithography Asia 2009, 752004 (14 December 2009); https://doi.org/10.1117/12.845745
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KEYWORDS
Photomasks

Extreme ultraviolet lithography

Semiconducting wafers

Reflectivity

Extreme ultraviolet

Optical lithography

Scattering

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