Cost, cost, cost: that is what it is - ultimately - all about. Single exposure lithography is the most cost effective means of
achieving critical level exposures, and extreme ultraviolet lithography (EUVL) is the only technology that will enable
this for ≤ 27nm production. ASML is actively engaged in the development of a multi-generation production EUVL
system platform that builds on TWINSCANTM technology and the designs and experience gained from the Alpha Demo
Tools (ADTs). The ADTs are full field step-and-scan exposure systems for EUVL and are being used at two research centers for EUVL process development by more than 10 of the major semiconductor chip makers, along with all major suppliers of masks and resist. Recently, successful implementation of EUVL for the contact hole and metal layer was demonstrated in the world's smallest (0.099 μm2) electrically functional 22nm CMOS SRAM device .
We will highlight the key features of the system description for the production platform, including the manufacturing
status of projection lens, illuminator optics, and source. Experimental results from ADT showing the progress in imaging
and resist work will be covered as well - a snapshot of imaging data can be seen in the figure below.
We will share our vision on the extendability of EUVL by discussing our system implementation roadmap. We will
explain our approach for multiple tool generations on a single platform, highlighting the ways to support the technology
nodes from 27nm half-pitch with a 0.25NA lens going down to below 16nm with a 0.32NA lens.