10 December 2009 EUVL: towards implementation in production
Author Affiliations +
Proceedings Volume 7520, Lithography Asia 2009; 752008 (2009); doi: 10.1117/12.845781
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
Cost, cost, cost: that is what it is - ultimately - all about. Single exposure lithography is the most cost effective means of achieving critical level exposures, and extreme ultraviolet lithography (EUVL) is the only technology that will enable this for ≤ 27nm production. ASML is actively engaged in the development of a multi-generation production EUVL system platform that builds on TWINSCANTM technology and the designs and experience gained from the Alpha Demo Tools (ADTs). The ADTs are full field step-and-scan exposure systems for EUVL and are being used at two research centers for EUVL process development by more than 10 of the major semiconductor chip makers, along with all major suppliers of masks and resist. Recently, successful implementation of EUVL for the contact hole and metal layer was demonstrated in the world's smallest (0.099 μm2) electrically functional 22nm CMOS SRAM device [1]. We will highlight the key features of the system description for the production platform, including the manufacturing status of projection lens, illuminator optics, and source. Experimental results from ADT showing the progress in imaging and resist work will be covered as well - a snapshot of imaging data can be seen in the figure below. We will share our vision on the extendability of EUVL by discussing our system implementation roadmap. We will explain our approach for multiple tool generations on a single platform, highlighting the ways to support the technology nodes from 27nm half-pitch with a 0.25NA lens going down to below 16nm with a 0.32NA lens.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Meiling, Nico Buzing, Kevin Cummings, Noreen Harned, Bas Hultermans, Roel De Jonge, Bart Kessels, Peter Kürz, Sjoerd Lok, Martin Lowisch, Joerg Mallman, Bill Pierson, Christian Wagner, Andre Van Dijk, Eelco Van Setten, John Zimmerman, Peter Cheang, Alek Chen, "EUVL: towards implementation in production", Proc. SPIE 7520, Lithography Asia 2009, 752008 (10 December 2009); doi: 10.1117/12.845781; https://doi.org/10.1117/12.845781

Extreme ultraviolet lithography


Extreme ultraviolet



Semiconducting wafers

Optics manufacturing


Anamorphic imaging at high NA EUV mask error factor...
Proceedings of SPIE (October 20 2016)
Vote taking for EUV lithography a radical approach to...
Proceedings of SPIE (March 24 2017)
EUVL: transition from research to commercialization
Proceedings of SPIE (August 28 2003)
EUVL system: moving towards production
Proceedings of SPIE (March 17 2009)
Progress in the ASML EUV program
Proceedings of SPIE (May 20 2004)
EUV lithography with the Alpha Demo Tools status and...
Proceedings of SPIE (March 13 2007)

Back to Top