10 December 2009 EUVL: towards implementation in production
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Proceedings Volume 7520, Lithography Asia 2009; 752008 (2009); doi: 10.1117/12.845781
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
Abstract
Cost, cost, cost: that is what it is - ultimately - all about. Single exposure lithography is the most cost effective means of achieving critical level exposures, and extreme ultraviolet lithography (EUVL) is the only technology that will enable this for ≤ 27nm production. ASML is actively engaged in the development of a multi-generation production EUVL system platform that builds on TWINSCANTM technology and the designs and experience gained from the Alpha Demo Tools (ADTs). The ADTs are full field step-and-scan exposure systems for EUVL and are being used at two research centers for EUVL process development by more than 10 of the major semiconductor chip makers, along with all major suppliers of masks and resist. Recently, successful implementation of EUVL for the contact hole and metal layer was demonstrated in the world's smallest (0.099 μm2) electrically functional 22nm CMOS SRAM device [1]. We will highlight the key features of the system description for the production platform, including the manufacturing status of projection lens, illuminator optics, and source. Experimental results from ADT showing the progress in imaging and resist work will be covered as well - a snapshot of imaging data can be seen in the figure below. We will share our vision on the extendability of EUVL by discussing our system implementation roadmap. We will explain our approach for multiple tool generations on a single platform, highlighting the ways to support the technology nodes from 27nm half-pitch with a 0.25NA lens going down to below 16nm with a 0.32NA lens.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Meiling, Nico Buzing, Kevin Cummings, Noreen Harned, Bas Hultermans, Roel De Jonge, Bart Kessels, Peter Kürz, Sjoerd Lok, Martin Lowisch, Joerg Mallman, Bill Pierson, Christian Wagner, Andre Van Dijk, Eelco Van Setten, John Zimmerman, Peter Cheang, Alek Chen, "EUVL: towards implementation in production", Proc. SPIE 7520, Lithography Asia 2009, 752008 (10 December 2009); doi: 10.1117/12.845781; https://doi.org/10.1117/12.845781
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KEYWORDS
Extreme ultraviolet lithography

Photomasks

Extreme ultraviolet

Reflectivity

Reticles

Semiconducting wafers

Optics manufacturing

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