Feasibility studies of source and mask optimization

Toshiharu Nakashima; Tomoyuki Matsuyama; Soichi Owa

doi:10.1117/12.837161

10 December 2009 Feasibility studies of source and mask optimization

Toshiharu Nakashima, Tomoyuki Matsuyama, Soichi Owa

Proceedings Volume 7520, Lithography Asia 2009; 75200C (2009) https://doi.org/10.1117/12.837161
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan

Abstract

In low-k1 lithography, it is difficult to keep pattern fidelity and contrast for all features in one layer. Source mask optimization (SMO) software provide solutions to keep pattern fidelity and contrast for the selected critical patterns. We have developed SMO software, and study the efficiency of the software. In this paper, we show, SMO software is effective for current 45 nm node SRAM cell layers (Active, Gate and Metal). In addition, SMO is also effective for cutting lithography technology. Cutting lithography is expected to apply 22 nm half pitch process and beyond.

Citation Download Citation

Toshiharu Nakashima, Tomoyuki Matsuyama, and Soichi Owa "Feasibility studies of source and mask optimization", Proc. SPIE 7520, Lithography Asia 2009, 75200C (10 December 2009); https://doi.org/10.1117/12.837161

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