10 December 2009 Feasibility studies of source and mask optimization
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Proceedings Volume 7520, Lithography Asia 2009; 75200C (2009) https://doi.org/10.1117/12.837161
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
Abstract
In low-k1 lithography, it is difficult to keep pattern fidelity and contrast for all features in one layer. Source mask optimization (SMO) software provide solutions to keep pattern fidelity and contrast for the selected critical patterns. We have developed SMO software, and study the efficiency of the software. In this paper, we show, SMO software is effective for current 45 nm node SRAM cell layers (Active, Gate and Metal). In addition, SMO is also effective for cutting lithography technology. Cutting lithography is expected to apply 22 nm half pitch process and beyond.
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Toshiharu Nakashima, Toshiharu Nakashima, Tomoyuki Matsuyama, Tomoyuki Matsuyama, Soichi Owa, Soichi Owa, } "Feasibility studies of source and mask optimization", Proc. SPIE 7520, Lithography Asia 2009, 75200C (10 December 2009); doi: 10.1117/12.837161; https://doi.org/10.1117/12.837161
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