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11 December 2009 After development inspection (ADI) studies of photo resist defectivity of an advanced memory device
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Proceedings Volume 7520, Lithography Asia 2009; 75200J (2009) https://doi.org/10.1117/12.837103
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
Abstract
In this study, a 3x-nm after development inspection (ADI) wafer with focus exposure matrix (FEM) was inspected with both an advanced optical system and an advanced EBI system, and the inspection results were carefully examined. We found that EBI can capture much more defects than optical system and it also can provide more information about within reticle shot defect distribution. It has high capture rate of certain critical defects that are insensitive to optical system, such as nano-bridges.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyung-Seop Kim, Yong Min Cho, Byoung-Ho Lee, Roland Yeh, Eric Ma, Fei Wang, Yan Zhao, Kenichi Kanai, Hong Xiao, and Jack Jau "After development inspection (ADI) studies of photo resist defectivity of an advanced memory device", Proc. SPIE 7520, Lithography Asia 2009, 75200J (11 December 2009); https://doi.org/10.1117/12.837103
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