11 December 2009 Implementation of double patterning process toward 22-nm node
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Proceedings Volume 7520, Lithography Asia 2009; 75201E (2009) https://doi.org/10.1117/12.839826
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
Abstract
In the field of photolithography, a variety of resolution enhancement techniques (RETs) are being applied under the mainstream technology of 193-mm water-based immersion lithography. The resolution performance of photoresist, however, is limited at 40 nm. Double patterning (DP) is considered to be an effective technology for overcoming this limiting resolution. Many double-patterning techniques have come to be researched such as litho-etch-litho-etch (LELE), litho-litho-etch (LLE), and self-aligned spacer DP, but as the pattern-splitting type of double patterning requires high overlay accuracy in exposure equipment, the self-aligned type of double patterning has become the main approach. This paper introduces the research results of various double-patterning techniques toward 22nm nodes and touches upon newly developed elemental technologies for double patterning.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hidetami Yaegashi, Hidetami Yaegashi, Eiichi Nisimura, Eiichi Nisimura, Kazuhide Hasebe, Kazuhide Hasebe, Tetsu Kawasaki, Tetsu Kawasaki, Masato Kushibiki, Masato Kushibiki, Arisa Hara, Arisa Hara, Shoichi Yamauchi, Shoichi Yamauchi, Sakurako Natori, Sakurako Natori, Nakajima Shigeru, Nakajima Shigeru, Hiroki Murakami, Hiroki Murakami, Kazuo Yabe, Kazuo Yabe, Satoru Shimura, Satoru Shimura, Fumiko Iwao, Fumiko Iwao, Kenichi Oyama, Kenichi Oyama, } "Implementation of double patterning process toward 22-nm node", Proc. SPIE 7520, Lithography Asia 2009, 75201E (11 December 2009); doi: 10.1117/12.839826; https://doi.org/10.1117/12.839826
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