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11 December 2009 Pattern prediction in EUV resists
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Proceedings Volume 7520, Lithography Asia 2009; 75201P (2009)
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
Accurate and flexible simulation methods may be used to further a researcher's understanding of how complex resist effects influence the patterning of critical structures. In this work, we attempt to gain insight into the behavior of a state-of-the-art EUV resist through the use of stochastic resist modeling. The statistics of photon and molecule counting are discussed. The acid generation mechanism at EUV is discussed. At lambda = 13.5 nm, the acid generation mechanism may be similar to that found in electron beam resists: acid generators are hypothesized to be activated by secondary electrons yielded by ionization of the resist matrix by high-energy EUV photons, suggesting that acid generators may be activated some distance from the absorption site. A discrete, probabilistic ionization and electron scattering model for PAG conversion at EUV is discussed. The simulated effect of resist absorbance at EUV upon doseto- size and line-width roughness is shown. The model's parameterized fit to experimental data from a resist irradiated EUV are shown. Predictions of statistical resist responses such as CD distribution and line-width roughness are compared with experimental data.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John J. Biafore, Mark D. Smith, Tom Wallow, Patrick Nalleau, David Blankenship, and Yunfei Deng "Pattern prediction in EUV resists", Proc. SPIE 7520, Lithography Asia 2009, 75201P (11 December 2009);


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