14 December 2009 In-situ monitoring and control of photoresist parameters during thermal processing in the lithography sequence
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Proceedings Volume 7520, Lithography Asia 2009; 752035 (2009) https://doi.org/10.1117/12.847879
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
Abstract
The rapid transition to smaller microelectronic feature sizes involves the introduction of new lithography technologies, new photoresist materials, and tighter processes specifications. This transition has become increasingly difficult and costly. The application of advanced computational and control methodologies have seen increasing utilization in recent years to improve yields, throughput, and, in some cases, to enable the actual process to print smaller devices. In this work, we demonstrate recent advances in real-time monitoring and control of these photoresist parameters with the use of innovative technologies, control and signal processing techniques; and integrated metrology to improve the performance of the various photoresist processing steps in the lithography sequence.
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Xiaodong Wu, Geng Yang, Ee-Xuan Lim, Arthur Tay, "In-situ monitoring and control of photoresist parameters during thermal processing in the lithography sequence", Proc. SPIE 7520, Lithography Asia 2009, 752035 (14 December 2009); doi: 10.1117/12.847879; https://doi.org/10.1117/12.847879
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