14 December 2009 Improving 1D optical proximity effect matching for 45-nm node by scatterometry metrology
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Proceedings Volume 7520, Lithography Asia 2009; 752036 (2009) https://doi.org/10.1117/12.849553
Event: SPIE Lithography Asia, 2009, Taipei, Taiwan
Abstract
The fingerprint of the optical proximity effect, OPE, is required to develop each process node's optical proximity correction (OPC) model. This model should work equally well on different exposure systems. However, small differences in optical and mechanical properties in the lithographic system can lead to a different CD characteristic for a given OPC. It becomes beneficial to match the OPE of one scanner to the scanner population in a fab. Here, we focus on aspects of angle resolving scatterometry metrology used for OPE matching of two XT:1700i scanners and compare those to SEM metrology. The capability of the scatterometry tool for monitoring the stability of OPE is evaluated. Scatterometry allows measuring the side wall angle, SWA, of a resist profile and this can be used as a measure for focus. Here, focus comparison by SWA is included into the matching process. For the application used here, the residual RMS mismatch through pitch for scatterometry could be reduced to 0.2nm compared to 0.5nm for CD-SEM.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dennis Chang, Reiner Jungblut, Jason Shieh, Alek Chen, Paul Hinnen, Henry Megens, Koen Schreel, "Improving 1D optical proximity effect matching for 45-nm node by scatterometry metrology", Proc. SPIE 7520, Lithography Asia 2009, 752036 (14 December 2009); doi: 10.1117/12.849553; https://doi.org/10.1117/12.849553
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