Influence of annealing on the structural and optical properties of thin multilayer EUV filters containing Zr, Mo, and silicides of these metals

N. I. Chkhalo; S. A. Gusev; M. N. Drozdov; E. B. Kluenkov; A. Ya. Lopatin; V. I. Luchin; A. E. Pestov; N. N. Salashchenko; L. A. Shmaenok; N. N. Tsybin

doi:10.1117/12.854728

26 February 2010 Influence of annealing on the structural and optical properties of thin multilayer EUV filters containing Zr, Mo, and silicides of these metals

N. I. Chkhalo, S. A. Gusev, M. N. Drozdov, E. B. Kluenkov, A. Ya. Lopatin, V. I. Luchin, A. E. Pestov, N. N. Salashchenko, L. A. Shmaenok, N. N. Tsybin

Author Affiliations +

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 752105 (2010) https://doi.org/10.1117/12.854728
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

New freestanding multilayers consisting of Zr, Mo and silicides have been fabricated and studied as spectral purity filters for the future generation of projection EUV lithography tools with a wavelength of operation 13 nm. The optical properties of multilayers were measured in EUV, visible and IR spectral ranges. Developed filters combine transparency of 70% at λ = 13 nm with high efficiency of suppression of out-of-band radiation (2-3 orders of magnitude from UV to IR regions). The reflectivity of filters at λ = 10.6 μm, where the spectral intensity of background radiation of laser plasma EUV source is at a maximum, achieves 88%. We have tested the withstandability of new multilayer structures to long-term (3 - 7 hours) vacuum heating by CO2-laser radiation at the power, absorbed per area unit of the specimen, of 8 W/cm². The annealed samples were studied by secondary ion mass-spectroscopy and optical measurements were also performed. The most promising structure Zr/ZrSi₂ coated with MoSi₂ layers showed smaller decrease in transparency at λ = 13 nm (from 73% to 68%) than other tested compositions. Freestanding filters of 160 mm in diameter with transparency of 65% at wavelength λ = 13 nm were manufactured for EUV lithography tool.

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N. I. Chkhalo, S. A. Gusev, M. N. Drozdov, E. B. Kluenkov, A. Ya. Lopatin, V. I. Luchin, A. E. Pestov, N. N. Salashchenko, L. A. Shmaenok, and N. N. Tsybin "Influence of annealing on the structural and optical properties of thin multilayer EUV filters containing Zr, Mo, and silicides of these metals", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752105 (26 February 2010); https://doi.org/10.1117/12.854728

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