26 February 2010 The metal hard-mask approach for contact patterning
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 752106 (2010) https://doi.org/10.1117/12.854680
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
Within the metal hard-mask (MHM) approach for contact patterning, the SiO2:TiN and SiO2:Si3N4 etch selectivities have been studied for an Ar-C4F8-CO-based discharge in a dual-frequency capacitive coupled plasma (DFC-CCP) chamber, as a function of gas additives and driving 2 MHz power. It is found that the O2 addition does dramatically decrease the SiO2:TiN and SiO2:Si3N4 selectivities, while 2MHz power raises the SiO2:Si3N4 but decreases the SiO2:TiN. The observed selectivity result from a balance between the sputtering by inert ions and the growth of a passivating fluorocarbon film, which thickness and composition depends on the substrate nature. Selectivity is also influenced by species kinetics at the plasma-surface interface.
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J.-F. de Marneffe, J.-F. de Marneffe, F. Lazzarino, F. Lazzarino, D. Goossens, D. Goossens, Th. Conard, Th. Conard, I. Hoflijk, I. Hoflijk, D. Shamiryan, D. Shamiryan, H. Struyf, H. Struyf, W. Boullart, W. Boullart, } "The metal hard-mask approach for contact patterning", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752106 (26 February 2010); doi: 10.1117/12.854680; https://doi.org/10.1117/12.854680
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