26 February 2010 Excitation mechanism of the B+ emission line at 345.1 nm in low-temperature plasmas
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 752109 (2010) https://doi.org/10.1117/12.853289
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
The results of a 345.1 nm line excitation mechanism investigation are presented. A comprehensive analysis of the radiative transition rates for the B+ lower energy levels is carried out. The rate constants of the electron impact excitation/de-excitation processes involved are also calculated. These fundamental data are used in a collisional-radiative model that results in the steady-state B+ level population. An important feature of the model is taking into account a ladder excitation mechanism through the metastable level 2s2p3Po by electron impact. This mechanism strongly changes the dependences of the level populations (and line intensities) on the plasma electron temperature. A dependence of the intensity ratio at 345.1 nm and 162.4 nm on the plasma electron temperature is also presented which can be used for plasma diagnostics.
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V. P. Kudrya, "Excitation mechanism of the B+ emission line at 345.1 nm in low-temperature plasmas", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752109 (26 February 2010); doi: 10.1117/12.853289; https://doi.org/10.1117/12.853289
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