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26 February 2010 Application of Langmuir probe technique in depositing plasmas for monitoring of etch process robustness and for end-point detection
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210A (2010) https://doi.org/10.1117/12.853840
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
The objective of the paper is to examine recently proposed Dynamic Langmuir probe (DLP) method as a simple and cost-effective tool for in situ monitoring of end-point detection in plasma etch process and to discuss the Langmuir probe application to indicate chamber walls conditions. Experiment was carried out in mixture CF4 and O2 during anisotropic plasma etching of blank structures Si3N4/SiO2/Si. To account for possible practical obstacles of end point detection in commercial process experimental conditions were intentionally chosen to be quite severe. Reduced etching area was about 35% of total area; wafer temperature was not controlled; process was not optimized for selectivity; detected interfaces include Si3N4/SiO2. DLP-data was compared with optical emission spectroscopy (OES) measurements. An approach to process drift prevention was shown by performing measurements in reference Ar plasma between etch processes causing wall contamination. Particularly correlation between plasma potential and cumulative time of processing in strongly depositing C4F8 plasma was studied.
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Andrey V. Miakonkikh and Konstantin V. Rudenko "Application of Langmuir probe technique in depositing plasmas for monitoring of etch process robustness and for end-point detection", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210A (26 February 2010); https://doi.org/10.1117/12.853840
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