26 February 2010 Optimization of parameters of process deep plasmachemical etching of silicon for elements MEMS
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210B (2010) https://doi.org/10.1117/12.853837
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
Dependences of characteristics of deep silicon etching on various process parameters are investigated. The method of planning multifactorial experiment is applied to a finding of the optimum recipes providing high selectivity to a mask and decrease of ARDE. Results of research are used by manufacturing of real MEMS structures.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. I. Vinogradov, A. I. Vinogradov, N. M. Zarjankin, N. M. Zarjankin, J. A. Mihajlov, J. A. Mihajlov, E. P. Prokopev, E. P. Prokopev, S. P. Timoshenkov, S. P. Timoshenkov, } "Optimization of parameters of process deep plasmachemical etching of silicon for elements MEMS", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210B (26 February 2010); doi: 10.1117/12.853837; https://doi.org/10.1117/12.853837
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