26 February 2010 Laser generation in broken-gap heterostructures
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210E (2010) https://doi.org/10.1117/12.853906
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
We investigate the effects of population inversion and laser generation in interesting and important quantum well laser structures made from InAs, AlSb, and GaSb. These broken-gap heterostructures, where the InAs conduction band overlaps with the GaSb valence band, are promising for fabrication different devices. We have considered the asymmetrical InAs/GaSb quantum wells sandwiched by the two AlSb wide-gap barrier layers, n-type InAs left contact and p-type GaSb right contact. We found that the population inversion and laser generation can be achieved in the structure under positive external bias. We have obtained the giant values of optical gain for the TM laser modes.
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I. Semenikhin, I. Semenikhin, K. A. Chao, K. A. Chao, A. Zakharova, A. Zakharova, } "Laser generation in broken-gap heterostructures", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210E (26 February 2010); doi: 10.1117/12.853906; https://doi.org/10.1117/12.853906
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