26 February 2010 Hf-based barrier layers for Cu-metallization
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210J (2010) https://doi.org/10.1117/12.854340
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
It is well known that due to interaction between Cu and Si in the regions of source and drain copper interconnections should not be in direct contact with Si. In this study the barrier properties of Hf-based thin films were investigated. Hafnium nitride films (15nm) and multilayer Hf-Si structures (50 alternate 0,2 nm-Hf and 0,4 nm-Si layers) were prepared by electron beam evaporation. Hf-Si sandwiches were annealed at 700°C and 900°C for 2 min to form silicide. Then 100 nm thick copper layers were deposited on the samples. For the Cu/HfNx/Si contact system the interfacial reactions between Cu, Hf and Si were observed after annealing at 500°C for 30 min by profile Auger analysis. The HfNx barrier fails and Cu atoms penetrate into the Si substrate. On the other hand Auger analysis results for Cu/HfSix/Si structure showed that there were not diffusion of Cu atoms in barrier layer and Si substrate. Findings demonstrate that hafnium silicide barrier layers can be used to prevent interfacial reactions between copper interconnections and silicon regions of source and drain.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. A. Khorin, I. A. Khorin, Yu. I. Denisenko, Yu. I. Denisenko, V. N. Gusev, V. N. Gusev, A. A. Orlikovsky, A. A. Orlikovsky, A. E. Rogozhin, A. E. Rogozhin, V. I. Rudakov, V. I. Rudakov, A. G. Vasiliev, A. G. Vasiliev, } "Hf-based barrier layers for Cu-metallization", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210J (26 February 2010); doi: 10.1117/12.854340; https://doi.org/10.1117/12.854340
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