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26 February 2010 Calculation of electrophysical parameters of thin undoped GaAs-in-Al2O3 quantum nanowires and single-wall armchair carbon nanotubes
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210S (2010) https://doi.org/10.1117/12.853655
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
In this study the results of electron mobility and drift velocity calculation in GaAs-in-Al2O3 quantum nanowires, resistance and conductivity of single-wall armchair carbon nanotubes as well as electric current in the nanotubes are presented.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitry Pozdnyakov, Andrei Borzdov, Vladimir Borzdov, and Vladimir Labunov "Calculation of electrophysical parameters of thin undoped GaAs-in-Al2O3 quantum nanowires and single-wall armchair carbon nanotubes", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210S (26 February 2010); https://doi.org/10.1117/12.853655
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