26 February 2010 Electron optical spin polarization in broken-gap heterostructures
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210W (2010) https://doi.org/10.1117/12.853748
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
We have investigated in detail the contributions of different symmetry breaking mechanisms into the electron optical spin polarization in asymmetrical quantum wells made from zinc-blende materials such as the AlSb/InAs/GaSb/AlSb broken-gap quantum wells which can be used as an active region of very promising mid-infrared semiconductor laser. The considered structure is grown on GaSb along the [001] direction and contains also the p-type contacts to the left and to the right side of the structure. We have found that the maximum value of the initial electron optical spin polarization can be about 40 % if the angle between the vector n along the direction of light propagation and the growth direction is π/10.
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A. Zakharova, K. A. Chao, Igor Semenikhin, "Electron optical spin polarization in broken-gap heterostructures", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210W (26 February 2010); doi: 10.1117/12.853748; https://doi.org/10.1117/12.853748
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