Translator Disclaimer
26 February 2010 Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films
Author Affiliations +
Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210X (2010) https://doi.org/10.1117/12.853385
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
Nanosecond laser treatments (KrF laser 248 nm wavelength, 20 ns pulse duration) and femtosecond laser treatments (Tisapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The energy densities for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33) grown on silicon or glass substrates. The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A.. Volodin, Taisiya T. Korchagina, Gennadiy N. Kamaev, Aleksandr Kh. Antonenko, Jurgen Koch, and Boris N. Chichkov "Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210X (26 February 2010); https://doi.org/10.1117/12.853385
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top