Paper
26 February 2010 Formation of carbonic nanostructures using PECVD and glow-discharge plasma at direct current
D. G. Gromov, S. A. Gavrilov, S. V. Dubkov
Author Affiliations +
Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210Y (2010) https://doi.org/10.1117/12.854748
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
In this research the process of formation carbonic nanostructures using low temperatures was studied. Nanostructures were formed using PECVD and glow-discharge plasma. The research was carried out at temperature range between 300°C - 700°C. The influence of Ni catalyst thickness and concentration of carbon-containing component in vapour phase on the structure of carbonic deposit was studied. Consequently we attained productive growth of both the homogeneous vertical nanotubes and graphene flakes array at low temperature (350°C). Electrophysical features of obtained structures were examined.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. G. Gromov, S. A. Gavrilov, and S. V. Dubkov "Formation of carbonic nanostructures using PECVD and glow-discharge plasma at direct current", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210Y (26 February 2010); https://doi.org/10.1117/12.854748
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KEYWORDS
Nanostructures

Resistance

Graphene

Nickel

Plasma enhanced chemical vapor deposition

Plasma

Chemical vapor deposition

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