Paper
26 February 2010 Investigations of nanostructured porous PbTe films with x-ray diffractometry and reflectometry
Sergey P. Zimin, Vladimir M. Vasin, Egor S. Gorlachev, Anatoly P. Petrakov, Sergey V. Shilov
Author Affiliations +
Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 752114 (2010) https://doi.org/10.1117/12.853728
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
In this work application of x-ray total external reflection method for the determination of the porosity value of PbTe and PbSe epitaxial films on silicon substrates subjected to anodic electrochemical etching in a Norr electrolyte was carried out. It is shown that the porosity values of the films can be in the range of 10-68% depending on the anodizing conditions. Triple-crystal x-ray diffractometry method was utilized for the estimation of quantitative characteristics of the pore dimensions along different directions. Nanometer-range pore dimensions and shape are estimated.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey P. Zimin, Vladimir M. Vasin, Egor S. Gorlachev, Anatoly P. Petrakov, and Sergey V. Shilov "Investigations of nanostructured porous PbTe films with x-ray diffractometry and reflectometry", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752114 (26 February 2010); https://doi.org/10.1117/12.853728
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Cited by 2 scholarly publications.
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KEYWORDS
X-rays

X-ray diffraction

Reflectometry

Lead

Silicon

Crystals

Nanostructuring

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