26 February 2010 Investigations of nanostructured porous PbTe films with x-ray diffractometry and reflectometry
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 752114 (2010) https://doi.org/10.1117/12.853728
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
In this work application of x-ray total external reflection method for the determination of the porosity value of PbTe and PbSe epitaxial films on silicon substrates subjected to anodic electrochemical etching in a Norr electrolyte was carried out. It is shown that the porosity values of the films can be in the range of 10-68% depending on the anodizing conditions. Triple-crystal x-ray diffractometry method was utilized for the estimation of quantitative characteristics of the pore dimensions along different directions. Nanometer-range pore dimensions and shape are estimated.
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Sergey P. Zimin, Vladimir M. Vasin, Egor S. Gorlachev, Anatoly P. Petrakov, Sergey V. Shilov, "Investigations of nanostructured porous PbTe films with x-ray diffractometry and reflectometry", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752114 (26 February 2010); doi: 10.1117/12.853728; https://doi.org/10.1117/12.853728
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