26 February 2010 Modeling of the interfacial separation work in relation to impurity concentration in adjoining materials
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75211C (2010) https://doi.org/10.1117/12.853475
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
On the basis of the general thermodynamic approach developed in a model describing the influence of point defects on the separation work at an interface of solid materials is developed. The kinetic equations describing the defect exchange between the interface and the material bulks are formulated. The model have been applied to the case when joined materials contain such point defects as impurity atoms (interstitial and substitutional), concretized the main characteristic parameters required for a numerical modeling as well as clarified their domains of variability. The results of the numerical modeling concerning the dependences on impurity concentrations and the temperature dependences are obtained and analyzed. Particularly, the effects of interfacial strengthening and adhesion incompatibility predicted analytically for the case of impurity atoms are verified and analyzed.
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Ilia M Alekseev, Tariel M. Makhviladze, Airat Kh. Minushev, Mikhail E. Sarychev, "Modeling of the interfacial separation work in relation to impurity concentration in adjoining materials", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75211C (26 February 2010); doi: 10.1117/12.853475; https://doi.org/10.1117/12.853475
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