26 February 2010 Optimization of near-surficial annealing for decreasing of depth of p-n-junction in semiconductor heterostructure
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75211D (2010) https://doi.org/10.1117/12.853230
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
In this paper analysis of dopant redistribution during formation of p-n-junction in semiconductor heterostructure by laser or microwave annealing has been done. It has been shown, that inhomogeneity of the heterostructure after annealing with appropriate duration leads to simultaneously increasing of sharpness of p-n-junction and homogeneity of dopant distribution in doped area. Inhomogeneity of temperature distribution leads to simultaneously increasing of both effects. Some conditions on properties of doped heterostructure and annealing time for simultaneously increasing of sharpness of p-n-junction and homogeneity of dopant distribution in doped area are formulated.
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E. L. Pankratov, "Optimization of near-surficial annealing for decreasing of depth of p-n-junction in semiconductor heterostructure", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75211D (26 February 2010); doi: 10.1117/12.853230; https://doi.org/10.1117/12.853230
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