26 February 2010 Intrinsic compact MOSFET model with correct account of positive differential conductance after saturation
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Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75211H (2010) https://doi.org/10.1117/12.853740
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation
Abstract
Entry level MOSFET and TFT models use channel-length modulation parameter λ to account for differential conductance after saturation. This is done by multiplying the expression for the drain current but the 1+λVDS factor, where VDS is the drain-to-source bias. However, this traditional approach suffers from non-monotonic behavior of the differential conductance with increasing drain-to-source bias. In the improved model, we offer a new approach that gives the correct monotonic decrease of the differential conductance. This improved model uses the standard set of MOSFET compact model parameters making it compatible with existing CAD tools.
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Valentin O. Turin, Valentin O. Turin, Alexander V. Sedov, Alexander V. Sedov, Gennady I. Zebrev, Gennady I. Zebrev, Benjamin Iñiguez, Benjamin Iñiguez, Michael S. Shur, Michael S. Shur, } "Intrinsic compact MOSFET model with correct account of positive differential conductance after saturation", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75211H (26 February 2010); doi: 10.1117/12.853740; https://doi.org/10.1117/12.853740
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