14 April 2010 Research on the optical and electrical properties of ITO thin film using magnetron sputtering
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Proceedings Volume 7522, Fourth International Conference on Experimental Mechanics; 752268 (2010) https://doi.org/10.1117/12.851395
Event: Fourth International Conference on Experimental Mechanics, 2009, Singapore, Singapore
Abstract
Due to excellent photoelectrical properties, ITO thin films become the indispensable flat transparent electrode for their practical applications in the flat-panel displays, touch screens, solar cells and electrochromic devices. Therefore, it's very necessary to study photoelectrical properties of ITO films. In this paper, ITO thin films were prepared on the glass substrates by DC magnetron sputtering technology, and measured the transmittance of ITO thin films in the visible region using the spectrophotometer; the resistivities were measured with the four-probe instrument. The effects of sputtering pressure, oxygen-argon flow ratio and sputtering power was researched on photoelectrical performance of ITO thin films. The results show that, the optimum parameters of ITO films prepared are: sputtering pressure 0.6Pa, oxygen-argon flow ratio 1:40, sputtering power 108W. The average transmittance in the visible area is 81.18%, resistivity is 8.9197 × 10-3Ω.cm.
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Changlong Cai, Yujia Zhai, Jing Huang, Xu Yang, Weiguo Liu, Aihua Gao, "Research on the optical and electrical properties of ITO thin film using magnetron sputtering", Proc. SPIE 7522, Fourth International Conference on Experimental Mechanics, 752268 (14 April 2010); doi: 10.1117/12.851395; https://doi.org/10.1117/12.851395
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