31 December 2010 Suppression of relaxation oscillation in strong optical injection-locked semiconductor laser diode
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Proceedings Volume 7544, Sixth International Symposium on Precision Engineering Measurements and Instrumentation; 754444 (2010); doi: 10.1117/12.885671
Event: Sixth International Symposium on Precision Engineering Measurements and Instrumentation, 2010, Hangzhou, China
Abstract
This paper investigates theoretically the suppression of relaxation oscillation (RO) in strong optical injection-locked semiconductor laser diode (SLD). The theoretical model is based on external injection locking (IL) in a SLD. In our simulation, an adaptive fourth-order Runge-Kutta algorithm is used to solve the rate equations of injection-locked SLD, the temporal evolution of the carrier and the light intensity in the SLD are obtained. Compared with previous reports of weak optical IL, where IL in SLD will experience a RO and finally come to a steady state, it is found in our study that this RO can be suppressed very well when employing strong optical IL, and the settling time in SLD becomes shorter with high intensity of injection; we also find that the suppression level is almost the same with the same injection ratio while different injection detune. And we believe our results of IL in the SLD with dc excitation can contribute to increase the modulation bandwidth of SLD.
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Xiaohui Fang, Wei Li, Jilong Bao, Tiefeng Xu, "Suppression of relaxation oscillation in strong optical injection-locked semiconductor laser diode", Proc. SPIE 7544, Sixth International Symposium on Precision Engineering Measurements and Instrumentation, 754444 (31 December 2010); doi: 10.1117/12.885671; https://doi.org/10.1117/12.885671
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KEYWORDS
Semiconductor lasers

Stereolithography

Diodes

Laser optics

Modulation

Optical amplifiers

Computer simulations

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