28 December 2010 Study on optical energy band gap of SrBi2Ta2O9 thin films annealed in a H2-contained ambient
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Proceedings Volume 7544, Sixth International Symposium on Precision Engineering Measurements and Instrumentation; 75446Y (2010) https://doi.org/10.1117/12.885300
Event: Sixth International Symposium on Precision Engineering Measurements and Instrumentation, 2010, Hangzhou, China
Abstract
SrBi2Ta2O9 (SBT) thin films have been prepared on fused quartz substrates by using metalorgnic decomposition (MOD) method. X-ray diffraction (XRD) patterns show that films are polycrystalline in nature at annealing temperature of 750°C. The original optical energy band gap Eg obtained is about 4.57 eV. The changes of the Eg values of SBT films in H2-contained ambient (forming gas, 5%H2 + 95%N2) at different annealing temperature are investigated by measurement of optical transmittance. The reductive atmosphere and temperature exhibit strong effects on the Eg values and the roughness of SBT films. Some significant changes of Eg values for the films are observed at 450°C and 500°C in the forming gas ambient. The Eg values increase from 4.57eV to 4.81eV and 4.92eV, respectively. These results could be attributed to degradation of polarization of SBT films, which being induced by Bi deficiency. Forming gas ambient has played an important role in the reductive reaction.
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Dong-sheng Wang, Tao Yu, Di Wu, Ai-dong Li, An Hu, Zhi-guo Liu, "Study on optical energy band gap of SrBi2Ta2O9 thin films annealed in a H2-contained ambient", Proc. SPIE 7544, Sixth International Symposium on Precision Engineering Measurements and Instrumentation, 75446Y (28 December 2010); doi: 10.1117/12.885300; https://doi.org/10.1117/12.885300
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