15 May 2010 Efficient simulation of three-dimensional EUV masks for rigorous source mask optimization and mask induced imaging artifact analysis
Author Affiliations +
Proceedings Volume 7545, 26th European Mask and Lithography Conference; 75450D (2010) https://doi.org/10.1117/12.863102
Event: 26th European Mask and Lithography Conference, 2010, Grenoble, France
Abstract
In this paper a rigorous three dimensional EUV mask simulation model is presented. The mask near field is simulated with the Waveguide method which is similar to the RCWA approach. Additionally the method is extended by a so called decompositions technique. The mask image is computed by coupling the Waveguide method with a fully vectorial imaging simulation model based on an extended Abbe approach. The basic theory of the models is explained. The optimization and combination of both simulation approaches enables the simulation and analysis of larger EUV mask areas required for the analysis of complex three dimensional EUV mask structures as well as the very fast simulation of standard sized EUV mask areas required in the context of source mask optimizations. Corresponding simulation examples like a rigorous source mask optimization and a mask induced imaging artifact analysis of a larger mask area demonstrate the capabilities and the performance of the new simulation system.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Evanschitzky, T. Fühner, F. Shao, A. Erdmann, "Efficient simulation of three-dimensional EUV masks for rigorous source mask optimization and mask induced imaging artifact analysis", Proc. SPIE 7545, 26th European Mask and Lithography Conference, 75450D (15 May 2010); doi: 10.1117/12.863102; https://doi.org/10.1117/12.863102
PROCEEDINGS
10 PAGES


SHARE
Back to Top