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15 May 2010 193nm resist deprotection study from outgassing measurements by TD-GCMS/FID
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Proceedings Volume 7545, 26th European Mask and Lithography Conference; 75450G (2010) https://doi.org/10.1117/12.863150
Event: 26th European Mask and Lithography Conference, 2010, Grenoble, France
Abstract
A methodology was developed in order to characterize the deprotection mechanisms implied in 193nm chemically amplified (CA) resists. This method is based on resist outgassing measurements as a function of exposure dose and bake temperature using Thermal Desorption-Gas Chromatography - Mass Spectrometry / Flame Ionization Detector (TDGCMS/ FID) technique. This approach allows both quantitative and qualitative studies of the outgassing behaviour and was validated from a 193nm model resist representative of CA formulations. In so doing, the identification of outgassed by-products respectively coming from the PAG, from the polymer as well as from the solvent is made possible. In parallel, quantitative results as a function of exposure dose and temperature allowed us to monitor the deprotection process and the solvent evaporation. The quantitative results obtained by this technique were in good agreement with Thermo-Gravimetric Analysis (TGA) results. Such a methodology can be used not only to characterise 193nm resist outgassing during exposure, but also be extended to monitor resist behaviour during implant, thermal treatment, e-beam exposure.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Raluca Tiron, Samir Derrough, Hervé Fontaine, Sylviane Cetre, Damien Perret, James W. Thackeray, and Patrick Paniez "193nm resist deprotection study from outgassing measurements by TD-GCMS/FID", Proc. SPIE 7545, 26th European Mask and Lithography Conference, 75450G (15 May 2010); https://doi.org/10.1117/12.863150
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