Positive or negative tone resist for a T-NIL/UVL hybrid process

Saskia Möllenbeck; Niocolas Bogdanski; Andre Mayer; Hella-Christin Scheer

doi:10.1117/12.863199

15 May 2010 Positive or negative tone resist for a T-NIL/UVL hybrid process

Saskia Möllenbeck, Niocolas Bogdanski, Andre Mayer, Hella-Christin Scheer

Proceedings Volume 7545, 26th European Mask and Lithography Conference; 75450T (2010) https://doi.org/10.1117/12.863199
Event: 26th European Mask and Lithography Conference, 2010, Grenoble, France

Abstract

In order to utilise both techniques in the best and easiest way, thermal nanoimprint (T-NIL) and optical/UV lithography (UVL) were combined in a hybrid process to pattern the same resist layer. Typically, T-NIL as the first step defines the small, submicron patterns, UVL as the second step the larger patterns, well above 1 μm. The hybrid process is performed with a conventional Si stamp for imprint and a conventional photomask for UVL and does not require any special infrastructure. Conventional, commercially available positive and negative tone resists were used, SU-8 and AR-P 3510. In the case of SU-8, a chemically amplified negative resist with low glass temperature, the imprint is uncritical and does not result in any optical degradation. However, the post exposure bake required to finalise the crosslink reaction has to be adapted and performed as a temperature ramp. In the case of AR-P 3510 the imprint step is critical, as the photoactive component is degenerated at suitable imprint temperatures. We found that at temperatures up to 130°C this degradation can be compensated by an increase of the exposure dose. Though more critical in processing, the positive tone resist features a better definition of the transition region between imprinted patterns and UV patterns.

Citation Download Citation

Saskia Möllenbeck, Niocolas Bogdanski, Andre Mayer, and Hella-Christin Scheer "Positive or negative tone resist for a T-NIL/UVL hybrid process", Proc. SPIE 7545, 26th European Mask and Lithography Conference, 75450T (15 May 2010); https://doi.org/10.1117/12.863199

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available