Paper
17 February 2010 Low-temperature study of lasing characteristics for 1.3-μm AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laser
K. W. Su, Yi-Fan Chen, S. C. Huang, A. Li, S. C. Liu, Y. F. Chen, K. F. Huang
Author Affiliations +
Abstract
We report a low-temperature 1.3μm AlGaInAs quantum-well laser pumped by a 1.06μm active Q-switched laser quenched by a low-temperature vacuum system. An average power of 330mW is achieved at temperature as low as 233K compared to the average power of 50mW obtained at room-temperature without cooling device both at pumping repetition rate of 30 kHz. And the average rate of gain peak shift was found to be 0.47 nm/K between 293-133 K.
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K. W. Su, Yi-Fan Chen, S. C. Huang, A. Li, S. C. Liu, Y. F. Chen, and K. F. Huang "Low-temperature study of lasing characteristics for 1.3-μm AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laser", Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 75780Z (17 February 2010); https://doi.org/10.1117/12.841897
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KEYWORDS
Semiconductor lasers

Q switched lasers

Nd:YAG lasers

Nitrogen

Transmittance

Absorption

Quantum wells

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