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17 February 2010 532 nm laser sources based on intracavity frequency doubling of multi-edge-emitting diode lasers
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Abstract
Intra-cavity frequency doubling (ICFD) of electrically and optically surface emitting diode lasers in the near IR region become more interesting [1-3] and will have an enormous impact in the display market. In this paper, Watts-level green laser is generated by ICFD of multi-emitters laser bar using a MgO-doped periodically poled lithium niobate (MgO: PPLN) bulk crystal, which has the potential to be scalable to high production volumes and low costs with immense implication for laser-based projection displays.
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Kang Li, N. J. Copner, C. B. E. Gawith, Ian G. Knight, Hans-Ulrich Pfeiffer, and Bob Musk "532 nm laser sources based on intracavity frequency doubling of multi-edge-emitting diode lasers", Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 757812 (17 February 2010); https://doi.org/10.1117/12.846565
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