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17 February 2010 InP diode-pumped Cr:ZnS and Cr:ZnSe highly efficient, widely tunable, mid-IR lasers
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Abstract
We present compact, highly-efficient, widely-tunable CW lasers based on Cr2+:ZnS and Cr2+:ZnSe gain media longitudinally pumped by a single-emitter, 1.5 W, 1685 nm InP semiconductor laser. The Cr2+:ZnSe laser demonstrates 35% slope, and 24% real optical efficiency, respectively, up to 400 mW of output power, and is tunable from 2200 to 2700 nm. The Cr2+:ZnS laser shows 44% slope, and 31% real optical efficiency, respectively, up to 500 mW of output power, and is tunable over 2100-2700 nm. The single-emitter diode pumping of chromium-doped chalcogenides allows for fabrication of middle-infrared tunable laser sources where low- or mid-range output powers are sufficient, while low footprint and miniature packaging are strictly required. In our presentation we will discuss the laser design issues specific to diode pumping, demonstrate the performance of the Cr:ZnS and Cr:ZnSe laser systems with different transmissions of the output couplers, describe several approaches for convenient wavelength tuning, and perform a comparison of diode pumping efficiency to that of fiber-laser pumping.
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Igor S. Moskalev, Vladimir V. Fedorov, and Sergey B. Mirov "InP diode-pumped Cr:ZnS and Cr:ZnSe highly efficient, widely tunable, mid-IR lasers", Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 75781K (17 February 2010); https://doi.org/10.1117/12.841377
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