Physical and engineering aspects of passively Q-switched microlasers

Yehoshua Kalisky

doi:10.1117/12.847243

17 February 2010 Physical and engineering aspects of passively Q-switched microlasers

Yehoshua Kalisky

Proceedings Volume 7578, Solid State Lasers XIX: Technology and Devices; 75781M (2010) https://doi.org/10.1117/12.847243
Event: SPIE LASE, 2010, San Francisco, California, United States

Abstract

The issue of microlasers and micro-chip laser devices, passively Q-switched and doped with rare earth lasing ions is well established. The various components of such monolithic lasers are diffusion-bonded to the gain medium or alternatively separated. Laser performance of several configurations based on various hosting crystals, as well as analytical modeling of the Q-switching process will be presented and discussed. The effect of various types of Q-switches on the laser performance will be presented and analyzed.

Citation Download Citation

Yehoshua Kalisky "Physical and engineering aspects of passively Q-switched microlasers", Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 75781M (17 February 2010); https://doi.org/10.1117/12.847243

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