17 February 2010 Physical and engineering aspects of passively Q-switched microlasers
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Abstract
The issue of microlasers and micro-chip laser devices, passively Q-switched and doped with rare earth lasing ions is well established. The various components of such monolithic lasers are diffusion-bonded to the gain medium or alternatively separated. Laser performance of several configurations based on various hosting crystals, as well as analytical modeling of the Q-switching process will be presented and discussed. The effect of various types of Q-switches on the laser performance will be presented and analyzed.
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Yehoshua Kalisky, Yehoshua Kalisky, } "Physical and engineering aspects of passively Q-switched microlasers", Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 75781M (17 February 2010); doi: 10.1117/12.847243; https://doi.org/10.1117/12.847243
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