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17 February 2010 Pr:YAlO3 and Pr:LiYF4 laser emission comparison under GaN laser diode pumping
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Abstract
In this paper we report on comparison of laser results reached by Pr-doped oxide and fluoride crystals under GaN-laser diode pumping at room temperature. As oxide and fluoride crystal representatives, Pr:YAlO3 (Pr:YAP) and Pr:LiYF4 (Pr:YLF) crystals were used. Pumping was accomplished by multimode GaN-laser diodes capable of providing output powers of up to 1W at wavelengths corresponding with Pr:YAP and Pr:YLF absorption peaks. For both samples, efficient stimulated emission in the red laser transition has been demonstrated, and laser results regarding the output power, threshold, and slope efficiency with respect to the absorbed power have been compared.
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Martin Fibrich, Helena Jelínková, Jan Šulc, Karel Nejezchleb, and Václav Škoda "Pr:YAlO3 and Pr:LiYF4 laser emission comparison under GaN laser diode pumping", Proc. SPIE 7578, Solid State Lasers XIX: Technology and Devices, 757828 (17 February 2010); https://doi.org/10.1117/12.840008
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