17 February 2010 Comparison of nonlinear absorption and carrier recombination times in GaAs grown by hydride vapor phase epitaxy and Bridgman processes
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Abstract
μA 760 μm thick GaAs crystal was grown using HVPE. Transmission spectrum of this sample showed minimal absorption for light having photon energy below the bandgap energy, indicating the absence of the EL2 defects commonly found in Bridgman grown samples. Irradiance dependent absorption measured at 1.535 μm using 100 ns duration laser pulses showed increased nonlinear absorption in the HVPE grown GaAs compared to Bridgman grown samples. The dominant nonlinear absorption process in both samples was absorption due to free carriers generated by two-photon absorption. The HVPE grown sample showed higher nonlinear absorption due to longer carrier lifetimes.
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Leonel P. Gonzalez, Leonel P. Gonzalez, Joel Murray, Joel Murray, Amelia Carpenter, Amelia Carpenter, Derek Upchurch, Derek Upchurch, Jacob O. Barnes, Jacob O. Barnes, Peter G. Schunemann, Peter G. Schunemann, Kevin Zawilski, Kevin Zawilski, Shekhar Guha, Shekhar Guha, } "Comparison of nonlinear absorption and carrier recombination times in GaAs grown by hydride vapor phase epitaxy and Bridgman processes", Proc. SPIE 7582, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications IX, 75821A (17 February 2010); doi: 10.1117/12.842947; https://doi.org/10.1117/12.842947
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