17 February 2010 High temperature and high peak-power 808nm QCW bars and stacks
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Abstract
808 nm QCW bars were fabricated and mounted with hard solder technology onto H-mounts and G-stacks. At room temperature, reliable operation has been demonstrated at 400W at 400A per single 1-cm bar and for a G-stack at 3kW at around 300A. High temperature reliable operation has been demonstrated for both devices up to 95°C. Both types of devices were tested at various pulse widths and duty cycles. Both optical power and wavelength dependencies on the various conditions have been studied.
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G. Bacchin, G. Bacchin, A. Fily, A. Fily, B. Qiu, B. Qiu, D. Fraser, D. Fraser, S. Robertson, S. Robertson, V. Loyo-Maldonado, V. Loyo-Maldonado, S. D. McDougall, S. D. McDougall, B. Schmidt, B. Schmidt, } "High temperature and high peak-power 808nm QCW bars and stacks", Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 75830P (17 February 2010); doi: 10.1117/12.843735; https://doi.org/10.1117/12.843735
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