17 February 2010 JENOPTIK diode lasers and bars optimized for high-power applications in the NIR range
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Laser diodes and laser bars for the high-volume wavelength ranges at 808 nm and 940 nm are available in optimized design and high quality. However, a lot of other wavelengths in the NIR are needed for specialized applications also requiring high stability, reliability and a good efficiency with a good beam quality. An efficient adaptation of the laser diode design to optimize the laser performance at the customized wavelength is highly desirable. At JENOPTIK Diode Lab (JDL) we therefore focus on a flexible and competitive laser diode design resulting in a high output power and a high efficiency at reasonable production costs. Starting from excellent laser bars at 808 nm and 940 nm laser bars with emission wavelengths around 790 nm, 830 nm, 880nm (cw) and 940 nm (pulsed operation) are developed. For 792 nm a maximum output power of 90 W and an efficiency of 55 % has been achieved with an expected lifetime of more than 15000 hours. At 825 nm a maximum efficiency of 60 % and 60 W output power for more than 20.000 h with a high degree of polarization can be presented. Changing the quantum well material for 885 nm the output power reaches 125W with 63% efficiency also for more than 25.000 hours. Laser bars for pulsed applications (quasi-cw) at 940 nm result in an output power of 500 W with an efficiency of 60 %.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Zorn, M. Zorn, R. Hülsewede, R. Hülsewede, H. Schulze, H. Schulze, J. Sebastian, J. Sebastian, P. Hennig, P. Hennig, D. Schröder, D. Schröder, } "JENOPTIK diode lasers and bars optimized for high-power applications in the NIR range", Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 75830U (17 February 2010); doi: 10.1117/12.843508; https://doi.org/10.1117/12.843508


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