High-brightness 635nm tapered diode lasers with optimized index guiding

D. Feise; G. Blume; H. Dittrich; Chr. Kaspari; K. Paschke; G. Erbert

doi:10.1117/12.840658

17 February 2010 High-brightness 635nm tapered diode lasers with optimized index guiding

D. Feise, G. Blume, H. Dittrich, Chr. Kaspari, K. Paschke, G. Erbert

Proceedings Volume 7583, High-Power Diode Laser Technology and Applications VIII; 75830V (2010) https://doi.org/10.1117/12.840658
Event: SPIE LASE, 2010, San Francisco, California, United States

Abstract

In this work, we present tapered diode lasers (TPL) emitting near 635 nm with an optimized lateral structure. To improve the beam quality as well as the output power, we varied the width of the ridge waveguide (RW) and the length of the RW and taper sections. All diode lasers were mounted p-side down with a common contact for both sections on a CVDdiamond heat spreader and soldered on C-mounts. Optimized TPLs emit 500 mW cw optical output power at a wavelength of 640 nm with a beam quality of M²(σ) = 2.6 and M²(1/e²) = 1.8, respectively. A maximum optical output power of 790 mW could be achieved.

Citation Download Citation

D. Feise, G. Blume, H. Dittrich, Chr. Kaspari, K. Paschke, and G. Erbert "High-brightness 635nm tapered diode lasers with optimized index guiding", Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 75830V (17 February 2010); https://doi.org/10.1117/12.840658

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