17 February 2010 Characteristics of red-emitting broad area stripe laser diodes with zinc diffused window structures
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Abstract
We have applied zinc diffused window structures to 640 nm broad area stripe laser diodes (BALDs) for the first time. A solid-phase zinc diffusion technique was used for a thick single quantum well (SQW) in GaInP employing the short wavelength and disordered active layer possessed a blue shift of 58 nm in photoluminescence spectrum. We fabricated 10 mm arrays including twenty-five BALDs and each BALD consists of a 60 μm ridge stripe and a 1000 μm cavity. An initial catastrophic optical damage (COD) level of the window laser was increased by four times of a conventional none-window laser. A long-term reliability under automatic current control was investigated for initial output powers of 13W and 15W which overcome a previous demonstration of 7.2 W. Measured degradations within a period of 1000-hours were 5 % or less, in contrast a half-life period of our conventional none-window laser with an initial output power of 10 W was only 120-hours. Therefore the window structure improved the BALD in terms of the COD level and the long-term reliability.
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Tomoki Ohno, Mikio Takiguchi, Kazuya Wakabayashi, Hiroyuki Uchida, Kaori Naganuma, Maho Ohara, Satoshi Ito, Shoji Hirata, "Characteristics of red-emitting broad area stripe laser diodes with zinc diffused window structures", Proc. SPIE 7583, High-Power Diode Laser Technology and Applications VIII, 75830W (17 February 2010); doi: 10.1117/12.840818; https://doi.org/10.1117/12.840818
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