Paper
17 February 2010 Up-conversion of crystal oscillator frequency in silicon package by near infrared, ultrashort laser
Yoshiro Ito, Fumiya Sato, Yuuki Shinohe, Rie Tanabe, Kozo Tada
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Abstract
Using an ultrashort pulse laser, photon energy of which is smaller than the band gap energy of silicon, machining of substances located at back of a silicon plate should be achievable. To realize this possibility, machining of a silicon substrate as well as machining of gold film on it was carried out using femtosecond laser pulses, wavelength of which lay between 1.5 to 2.5 μm. It is demonstrated that the rare surface of the silicon substrate and the gold film placed at the back of the silicon substrate can be machined with no detectable change on its front surface. Frequency adjustment of crystal oscillator sealed in a silicon package is tried and up-conversion of the frequency is achieved by removing small amount of thin gold film on the crystal with irradiation of 1.5 μm laser pulses through the silicon lid.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiro Ito, Fumiya Sato, Yuuki Shinohe, Rie Tanabe, and Kozo Tada "Up-conversion of crystal oscillator frequency in silicon package by near infrared, ultrashort laser", Proc. SPIE 7584, Laser Applications in Microelectronic and Optoelectronic Manufacturing XV, 75840M (17 February 2010); https://doi.org/10.1117/12.845475
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Silicon

Crystals

Semiconductor lasers

Oscillators

Gold

Laser crystals

Pulsed laser operation

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