Translator Disclaimer
17 February 2010 Lasers in the manufacturing of LEDs
Author Affiliations +
Lasers are becoming increasingly important in today's LED revolution and are essential for increasing the efficiency and reducing manufacturing cost of LEDs. Excimer lasers provide unique homogeneous illumination of large areas, and are ideally suited for laser lift off (LLO) of the LED film from the sapphire substrate used for epitaxial growth. In this paper we will discuss the excimer laser lift off technique for manufacturing vertical type LEDs, and how it can be applied to GaN and AlN based LEDs. On the other hand, diode pumped solid state lasers excel in scribing and cutting of a number of materials relevant to the LED industry: sapphire, silicon, silicon carbide, III-nitrides (gallium nitride and aluminum nitride), as well as III-V semiconductors (gallium arsenide, gallium phosphide). In this paper we will discuss some of the recent laser scribing techniques and how adequate selection of laser parameters and beam delivery optics allows for a high quality high throughput process.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marco Mendes, Jie Fu, Christian Porneala, Xiangyang Song, Mat Hannon, and Jeff Sercel "Lasers in the manufacturing of LEDs", Proc. SPIE 7584, Laser Applications in Microelectronic and Optoelectronic Manufacturing XV, 75840T (17 February 2010);


GaN based light emitting diodes by laser lift off with...
Proceedings of SPIE (September 19 2013)
Progress and challenges in GaN-on-Si LEDs
Proceedings of SPIE (March 08 2016)
Tuneable UV solid-state laser lines for surface processing
Proceedings of SPIE (February 15 2018)
High yield thin GaN LED using metal bonding and laser...
Proceedings of SPIE (October 15 2012)
Laser lift off of GaN thin film and its application...
Proceedings of SPIE (October 10 2012)
Markets and technology needs for UHB-LEDs
Proceedings of SPIE (September 26 2007)

Back to Top