17 February 2010 Recent advancements in technology of compact laser plasma EUV sources
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The recent advancements in technology of compact laser plasma EUV sources based on a gas puff target are presented in the paper. The sources have been developed for application in processing materials using EUV radiation in the wavelength range from about 5 nm to about 50 nm that is efficiently produced in result of irradiation a double-stream gas puff target with high-intensity laser pulses from a Nd:YAG laser (0.8 J/4 ns/10 Hz). The sources can be equipped with two various grazing incidence optical systems to focus EUV radiation: an axisymmetrical ellipsoidal mirror or a multifoil mirror system of the "lobster eye" type. A new design of the laser plasma EUV source dedicated for micro- and nanoprocessing polymers and modification of polymer surfaces is presented for the first time.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Henryk Fiedorowicz, Henryk Fiedorowicz, Andrzej Bartnik, Andrzej Bartnik, Roman Jarocki, Roman Jarocki, Jerzy Kostecki, Jerzy Kostecki, Ladislav Pina, Ladislav Pina, Mirosław Szczurek, Mirosław Szczurek, Przemysław Wachulak, Przemysław Wachulak, } "Recent advancements in technology of compact laser plasma EUV sources", Proc. SPIE 7584, Laser Applications in Microelectronic and Optoelectronic Manufacturing XV, 75840U (17 February 2010); doi: 10.1117/12.841715; https://doi.org/10.1117/12.841715


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