17 February 2010 Recent advancements in technology of compact laser plasma EUV sources
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Abstract
The recent advancements in technology of compact laser plasma EUV sources based on a gas puff target are presented in the paper. The sources have been developed for application in processing materials using EUV radiation in the wavelength range from about 5 nm to about 50 nm that is efficiently produced in result of irradiation a double-stream gas puff target with high-intensity laser pulses from a Nd:YAG laser (0.8 J/4 ns/10 Hz). The sources can be equipped with two various grazing incidence optical systems to focus EUV radiation: an axisymmetrical ellipsoidal mirror or a multifoil mirror system of the "lobster eye" type. A new design of the laser plasma EUV source dedicated for micro- and nanoprocessing polymers and modification of polymer surfaces is presented for the first time.
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Henryk Fiedorowicz, Henryk Fiedorowicz, Andrzej Bartnik, Andrzej Bartnik, Roman Jarocki, Roman Jarocki, Jerzy Kostecki, Jerzy Kostecki, Ladislav Pina, Ladislav Pina, Mirosław Szczurek, Mirosław Szczurek, Przemysław Wachulak, Przemysław Wachulak, } "Recent advancements in technology of compact laser plasma EUV sources", Proc. SPIE 7584, Laser Applications in Microelectronic and Optoelectronic Manufacturing XV, 75840U (17 February 2010); doi: 10.1117/12.841715; https://doi.org/10.1117/12.841715
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