26 February 2010 Visualization of a-Se nanostructures by evanescent light microscopy
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Abstract
Photodeposition (PD) from solutions has been used for realizing various thin film patterns of sub-microscopic thicknesses i.e., 5-500 (nm) to produce various spatially distributed components for optical applications. During PD nanometer particles appear on the irradiated zones of any transparent substrates, such as glass used in this investigation. In this work, Continuous Wave (CW) Photodeposition from a-Se colloid solutions onto glass substrates a Xenon UV-Visible lamp has been employed. We evaluated the morphology of ultra-thin a-Se photodeposited nanostructures obtained by direct deposition of a-Se on glass substrates serving as waveguides by a new technique based on capturing the evanescent light leaking image, named Differential Evanescent Light Intensity (DELI). We obtained that deposition fluencies of about F ≈ 300 J/cm2 were enough to produce layers up to about 340 nm thickness, similar to values needed for CW Ar+ ion laser PD deposition at λ = 498 nm reported in previous investigations.
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N. Mirchin, S. A. Popescu, I. Lapsker, A. Peled, "Visualization of a-Se nanostructures by evanescent light microscopy", Proc. SPIE 7586, Synthesis and Photonics of Nanoscale Materials VII, 75860M (26 February 2010); doi: 10.1117/12.840927; https://doi.org/10.1117/12.840927
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