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16 February 2010 Fabrication techniques of high aspect ratio vertical lightpipes using a dielectric photomask
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We report the development of new fabrication techniques for creating high aspect ratio optical lightpipes in SiO2 layers of 10μm thickness and above. A dielectric photo mask was used for deep reactive ion etching. Our experiments show that CF4-based reaction gases were best for deep etching with high selectivity and etch rate. Trenches with diameters or width of 1.5μm were demonstrated, with an aspect ratio of 7.2:1 and a sidewall angle of 87.4 degrees. We also present the lift-off process of the etch masks and the via-filling procedures for the lightpipes. These structures are useful for image sensors, vertical interconnect and waveguiding applications.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Winnie N. Ye, Peter Duane, Munib Wober, and Kenneth B. Crozier "Fabrication techniques of high aspect ratio vertical lightpipes using a dielectric photomask", Proc. SPIE 7591, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III, 75910D (16 February 2010);


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