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16 February 2010 Fabrication techniques of high aspect ratio vertical lightpipes using a dielectric photomask
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Abstract
We report the development of new fabrication techniques for creating high aspect ratio optical lightpipes in SiO2 layers of 10μm thickness and above. A dielectric photo mask was used for deep reactive ion etching. Our experiments show that CF4-based reaction gases were best for deep etching with high selectivity and etch rate. Trenches with diameters or width of 1.5μm were demonstrated, with an aspect ratio of 7.2:1 and a sidewall angle of 87.4 degrees. We also present the lift-off process of the etch masks and the via-filling procedures for the lightpipes. These structures are useful for image sensors, vertical interconnect and waveguiding applications.
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Winnie N. Ye, Peter Duane, Munib Wober, and Kenneth B. Crozier "Fabrication techniques of high aspect ratio vertical lightpipes using a dielectric photomask", Proc. SPIE 7591, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III, 75910D (16 February 2010); https://doi.org/10.1117/12.840725
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