Paper
16 February 2010 Multiwavelength rolled-up InGaAs/GaAs quantum dot microtube lasers
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Abstract
We have studied the design, fabrication and characterization of free-standing rolled-up InGaAs/GaAs quantum dot microtube ring resonators, formed by the controlled release of coherently strained InGaAs/GaAs quantum dot heterostructures from the host substrate. The dependence of the 3-dimenionally confined optical modes on the tube wall thickness and surface geometry is investigated both theoretically and experimentally. We have further demonstrated optically pumped rolled-up microtube lasers at room temperature, which exhibit emission wavelengths in the range of 1.1 - 1.3 μm and a low threshold of ~ 4 μW. The design and fabrication of electrically injected rolled-up InGaAs/GaAs quantum dot microtube devices is also described.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Li and Z. Mi "Multiwavelength rolled-up InGaAs/GaAs quantum dot microtube lasers", Proc. SPIE 7591, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III, 75910O (16 February 2010); https://doi.org/10.1117/12.843255
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KEYWORDS
Quantum dots

Resonators

Gallium arsenide

Optical pumping

Heterojunctions

Laser damage threshold

Etching

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